PART |
Description |
Maker |
WED2ZL64512S WED2ZL64512S35BC WED2ZL64512S38BC WED |
512K x 64 Synchronous Pipeline NBL SRAM
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White Electronic Designs Corporation
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IS61NLP51236 IS61NVP25672-200B1 |
256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
Integrated Silicon Solu...
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IS61NVVP25672-250B IS61NVVP25672-250BI IS61NVVP256 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
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IS61NLP25636 IS61NLP25632 IS61NLP51218 IS61NP51218 |
256K x 32 pipeline no wait state bus sram 256K x 32/ 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K x 32 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
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ISSI[Integrated Silicon Solution Inc] ISSI[Integrated Silicon Solution, Inc]
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WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
|
Vicor, Corp.
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CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100 High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100 Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100 Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
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IDT Integrated Device Technology, Inc. SRAM
|
5429FCT520CTD 5429FCT520CTDB 5429FCT520CTE 5429FCT |
CONNECTOR ACCESSORY 连接器附 MULTILEVEL PIPELINE REGISTERS 多级管道登记 MULTILEVEL PIPELINE REGISTERS
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT[Integrated Device Technology] http://
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
AS7C33256PFD16A AS7C33256PFD18A AS7C33256PFD18A-10 |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 100 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 133 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 150 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 166 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 100 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 150 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 166 MHz
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Alliance Semiconductor
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